The HGTG40N60A4 is a high voltage IGBT transistor designed for use in various applications. It is manufactured by Fairchild/ON Semiconductor and has a maximum collector-emitter breakdown voltage of 600V. The IGBT type of this transistor is not specified and it has a gate charge of 350nC. The maximum current collector of this transistor is 75A and it has a maximum power dissipation of 625W. The turn-on and turn-off delay time of this transistor is 25ns and 145ns respectively. The HGTG40N60A4 comes in a TO-247 case/package and can operate in a temperature range of -55°C to 150°C (TJ). This transistor is commonly used and is popular among users with a balance of supply and demand status. The estimated EOL date of this transistor is 2019. It is halogen-free and compliant with ECCN: EAR99. The HGTG40N60A4 is available in a quantity of 450 pieces per package.