The Fairchild/ON Semiconductor HGT1S3N60A4DS is a discrete semiconductor product with a TO-263AB package. It has a collector-emitter breakdown voltage of 600V and a maximum current collector of 17A. The IGBT type is not specified, and it has a gate charge of 21nC. The HGT1S3N60A4DS operates at a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W. It has a total switching energy of 37µJ (on) and 25µJ (off) with a turn-on and turn-off delay time of 6ns/73ns. It has a balanced supply and demand status.