The HGT1S12N60C3DS is a single IGBT transistor used in discrete semiconductor products. It is commonly used in applications that require high power handling. This IGBT has a maximum power rating of 104W and a reverse recovery time (trr) of 32ns. With a collector-emitter breakdown voltage (Vce) of 600V and a maximum collector current (Ic) of 24A, it can handle significant power levels. The Vce(on) is 2.2V at a gate-emitter voltage (Vge) of 15V and a collector current (Ic) of 15A. The HGT1S12N60C3DS is surface mountable and comes in a TO-263-3, D²Pak package. It has a temperature range of -40°C to 150°C and is manufactured by Fairchild/ON Semiconductor. This product is currently active and is suitable for various power applications.