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Same model may have multiple batches, images only for reference.
G5N120 Real Image
Same model may have multiple batches, images only for reference.

G5N120

Part No G5N120
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 21A 167W TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 21A
Pulsed Collector Current 40A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 5A
Maximum Power Dissipation 167W
Total Switching Energy(Ets) 450μJ (on), 390μJ (off)
Input Type Standard
Gate Charge 53nC
Turn-on and Turn-off delay time 22ns/160ns
Testing Conditions 960V, 5A, 25 Ohm, 15V
Reverse Recovery Time (trr) 65ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 067607-G5N120
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian G5N120 CAD Model

Description

The Fairchild/ON Semiconductor G5N120 is an IGBT transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 21A
  • Reverse Recovery Time (trr): 65ns
  • Collector-Emitter Saturation Voltage (max): 2.7V at 15V, 5A
  • Supply and Demand Status: Limited (Not Recommended for New Designs)
  • Win Source Part Number: 067607-G5N120

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Quantity Unit Price Ext. Price
2+ $30.8708 $61.7416
5+ $25.3292 $126.6460
8+ $24.5380 $196.3040
10+ $23.7468 $237.4680
13+ $22.9545 $298.4085
17+ $20.5809 $349.8753
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