The G11N120CND is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild/ON Semiconductor. It is designed for use in various applications and comes in a TO-247 package. The device has a maximum collector-emitter breakdown voltage of 1200V and a maximum current collector of 43A. The G11N120CND has a reverse recovery time of 70ns and an input type of standard. It has a gate charge of 100nC and a collector-emitter saturation voltage of 2.4V at 15V, 11A. The device has a total switching energy of 950μJ (on) and 1.3mJ (off) and a turn-on and turn-off delay time of 23ns/180ns. The G11N120CND is a medium popularity electronic component with limited supply and demand status.