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FGL40N150D

Part No FGL40N150D
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description Electrical Characteristics of the IGBT
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1174198-FGL40N150D
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
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Ultra Librarian 3D Model Ultra Librarian FGL40N150D CAD Model

Description

The FGL40N150D is a 1500V, 40A N-Channel IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This IGBT is designed for high-voltage, high-current switching applications, offering a combination of high voltage capability, fast switching speed, and low conduction losses. It's suitable for demanding power electronic circuits operating at higher voltages.

Applications

  • High Voltage Motor Drives
  • High Voltage Inverters
  • Solid State Relays
  • High Voltage Power Supplies
  • Induction Heating Systems
  • Renewable Energy Inverters (e.g., Solar, Wind)

Features

  • High Voltage Capability: 1500V breakdown voltage.
  • High Current Capability: 40A continuous collector current.
  • Fast Switching Speed: Reduces switching losses.
  • Low Saturation Voltage: Minimizes conduction losses.
  • Gate Oxide Ruggedness: Ensures reliable operation.
  • TO-3P Package: Provides good thermal performance.

Benefits

  • Improved Efficiency: High voltage and fast switching minimize energy loss.
  • Increased Power Density: Allows for compact designs.
  • Enhanced Reliability: Robust design ensures stable performance.
  • Simplified Design: Easier integration due to its characteristics.
  • Reduced Cooling Needs: Lower power dissipation reduces heatsink requirements.

Additional Details

The FGL40N150D features a maximum collector-emitter voltage (VCE) of 1500V, a continuous collector current (IC) of 40A, and a gate-emitter voltage (VGE) of ±20V. Its operating junction temperature ranges from -55°C to +150°C. The device is packaged in a TO-3P configuration, facilitating efficient heat dissipation. The IGBT's characteristics make it well-suited for applications where high voltage and current handling are critical, such as high-power inverters and motor drives. Its robust design ensures reliable operation even under demanding conditions. The fast switching characteristics and low saturation voltage contribute to efficient power conversion, reducing energy losses and improving overall system performance. This IGBT's high voltage rating enables it to be used in applications where conventional IGBTs with lower voltage ratings are not suitable, making it a versatile component for high-power electronics.

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