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Same model may have multiple batches, images only for reference.
FGH60N60SFD Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGH60N60SFD

Part No FGH60N60SFD
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 60A 378W TO247 / Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 120A
Pulsed Collector Current 180A
Collector-emitter saturation voltage(Max) 2.9V @ 15V, 60A
Maximum Power Dissipation 378W
Total Switching Energy(Ets) 1.97mJ (on), 570μJ (off)
Input Type Standard
Gate Charge 188nC
Turn-on and Turn-off delay time 26ns/134ns
Testing Conditions 400V, 60A, 5 Ohm, 15V
Reverse Recovery Time (trr) 55ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 088446-FGH60N60SFD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name FGH60N60SFD
Introduction Date August 01, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian FGH60N60SFD CAD Model

Description

The Fairchild/ON Semiconductor FGH60N60SFD is a high-popularity IGBT transistor designed for use in electronic circuits. It has a limited supply and demand status and is RoHS compliant.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 120A
  • Maximum Power Dissipation: 378W
  • Total Switching Energy: 1.97mJ (on), 570μJ (off)

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