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Same model may have multiple batches, images only for reference.
FGA25N120ANDTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGA25N120ANDTU

Part No FGA25N120ANDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 40A 310W TO3P / Trans IGBT Chip N-CH 1200V 40A 310000mW 3-Pin(3+Tab) TO-3P Rail
Datasheet
FGA25N120ANDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 40A
Current - Collector Pulsed (Icm) 75A
Vce(on) (Maximum) @ Vge, Ic 3.2V @ 15V, 25A
Power - Max 310W
Switching Energy 4.8mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 200nC
Td (on/off) @ 25°C 60ns/170ns
Test Condition 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr) 350ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-3P-3, SC-65-3
Manufacturer Package TO-3P
Win Source Part Number 774529-FGA25N120ANDTU
Popularity Medium
Supply and Demand Status Limited
Family Name FGA25N120AND
Introduction Date May 15, 2003
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FGA25N120ANDTU CAD Model

Description

The FGA25N120ANDTU is an NPT IGBT that is designed for use in discrete semiconductor products. It has a voltage collector emitter breakdown maximum of 1200V and a Vce(on) maximum of 3.2V @ 15V, 25A.

  • Current Collector Pulsed: 75A
  • Switching Energy: 4.8mJ (on), 1mJ (off)
  • Gate Charge: 200nC
  • Td (on/off): 60ns/170ns @ 25°C, 600V, 25A, 10 Ohm, 15V
  • Package: TO-3P-3, SC-65-3
  • Mounting: Through hole
  • Power Maximum: 310W
  • Family: FGA25N120AND
  • Status: Obsolete (EOL)
  • Manufacturer: Fairchild/ON Semiconductor

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