The FCD600N65S3RO is a 650V N-Channel SuperFET® III MOSFET from Fairchild Semiconductor (now ON Semiconductor). This MOSFET is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. It is well-suited for applications requiring high efficiency and reliability.

Applications

• Power Factor Correction (PFC)
• Uninterruptible Power Supplies (UPS)
• Server Power Supplies
• Telecom Power Supplies
• Solar Inverters
• Industrial Power Supplies

Features

• Low On-Resistance: Minimizes conduction losses, improving efficiency.
• High Avalanche Energy: Robust performance under avalanche conditions.
• Improved dv/dt Capability: Enhanced immunity to voltage transients.
• 100% Avalanche Tested: Ensures reliability and robustness.
• RoHS Compliant: Environmentally friendly.
• SuperFET® III Technology: Fairchild's advanced MOSFET technology for superior performance.

Benefits

• Increased Efficiency: Lower on-resistance and switching losses translate to higher overall efficiency in power conversion applications.
• Improved Reliability: High avalanche energy and dv/dt capability ensure robust and reliable operation in demanding environments.
• Simplified Design: Easier to design into power supplies due to its predictable performance.
• Reduced System Cost: Higher efficiency can lead to smaller heat sinks and lower overall system cost.
• Compliance: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The FCD600N65S3RO features a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 14A (at Tc = 25°C). Its typical on-resistance (RDS(on)) is very low, which contributes to its high efficiency. The device is typically supplied in a TO-220 package allowing for effective heat dissipation. The gate threshold voltage (VGS(th)) is typically around 3V. The device's fast switching speed and low gate charge (Qg) contribute to reduced switching losses. It is designed to operate over a wide temperature range. The device's internal gate resistance is optimized for fast switching while maintaining good EMI performance. The SuperFET® III technology allows for a smaller die size with improved performance characteristics.