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Win Source Part Number WS1209165-EPC2037
Manufacturer EPC
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian EPC2037 CAD Model

Description

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4437 $53.3244
28+ $3.6461 $102.0908
43+ $3.5322 $151.8846
59+ $3.4182 $201.6738
76+ $3.3043 $251.1268
102+ $2.9625 $302.1750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 12,500 pieces
MOQ: 12 pcs
Order Increment : 1 piece
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