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ZXMN6A25G

Part No ZXMN6A25G
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description 60V SOT223 N-channel enhancement mode MOSFET | MOSFET N-CH 60V 4.8A SOT223
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 4.8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 50mOhm at 3.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20.4nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1063pF at 30V
Power Dissipation (Maximum) 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1283473-ZXMN6A25G
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN6A25G CAD Model

Description

Introducing the ZXMN6A25G MOSFET from Diodes Incorporated

The ZXMN6A25G is a cutting-edge, high-performance Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This device is designed to deliver efficiency and reliability for a wide range of applications.

The ZXMN6A25G is part of the N-channel MOSFET family and is known for its low on-resistance and high continuous drain current capability. It is housed in a compact SOT-223 package, which not only saves on board space but also ensures a lower thermal resistance, providing better heat dissipation for improved performance stability.

Key Features:

  • Low On-Resistance (R<sub>DS(on)): This MOSFET offers a low on-state resistance, which translates to reduced conduction losses and enhances overall efficiency, making it ideal for power management applications.
  • High Continuous Drain Current (I<sub>D): With the ability to handle a high level of continuous current, the ZXMN6A25G is suitable for demanding applications that require robust current handling capabilities.
  • Enhanced Thermal Performance: The SOT-223 package is designed to offer excellent thermal performance, ensuring the device operates within its specified temperature range even under high load conditions.
  • Voltage Rated: This MOSFET is rated for a drain-source voltage (V<sub>DS) that allows it to be used in a variety of circuits and applications without the risk of breakdown.

Applications:

  • Power Supply Regulation
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Switching Circuits

The ZXMN6A25G MOSFET from Diodes Incorporated is a testament to the company's commitment to providing high-quality, reliable components. Whether you're designing power supplies, working on motor control circuits, or developing sophisticated battery management systems, the ZXMN6A25G is engineered to exceed your expectations and deliver unparalleled performance.

With its robust design and impressive specifications, the ZXMN6A25G is the perfect choice for engineers looking to enhance the efficiency and reliability of their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6897 $58.6245
205+ $0.5660 $116.0300
320+ $0.5483 $175.4560
440+ $0.5306 $233.4640
565+ $0.5128 $289.7320
755+ $0.4598 $347.1490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,900 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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