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ZXM62N02E6TA

Part No ZXM62N02E6TA
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Continuous Drain Current 3.2(A)
Gate-Source Voltage (Max) ±12(V)
Power Dissipation 1.7(W)
Mounting Surface Mount
Drain-Source On-Res 0.1(ohm)
Package Type SOT-23
Packaging Tape and Reel
Pin Count 6
Polarity N
Type Power MOSFET
Number of Elements 1
Channel Mode Enhancement
Drain-Source On-Volt 20(V)
Rad Hardened No
Win Source Part Number 057855-ZXM62N02E6TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXM62N02E6TA CAD Model

Description

The ZXM62N02E6TA is a high-performance, N-channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This MOSFET is part of their extensive range of power management devices, engineered to cater to a wide array of applications requiring efficient power conversion and control.

With its compact SOT-23 package, the ZXM62N02E6TA is a perfect fit for space-constrained applications, offering a blend of small footprint and high efficiency. This MOSFET is characterized by a low on-resistance (R<sub>DS(on)), which significantly reduces power losses during operation, enhancing overall system efficiency and reliability. It is designed to handle a continuous drain current (I<sub>D) of 1.8A, making it suitable for moderate power handling requirements.

The device boasts a maximum drain-source voltage (V<sub>DS) of 20V, which allows it to be used in circuits with moderate voltage levels. Its threshold voltage (V<sub>GS(th)) is specified to ensure a quick and reliable turn-on at lower voltages, thus making it a versatile component for various circuit designs. Additionally, the ZXM62N02E6TA features fast switching speeds, which is essential for applications that require high-frequency operation, such as switch-mode power supplies and DC-DC converters.

The MOSFET's thermal performance is also noteworthy, with a power dissipation rating that ensures stable operation even under higher temperatures. This is crucial for maintaining performance and longevity in applications where thermal management is a concern. The ZXM62N02E6TA is also characterized by its low gate charge (Q<sub>G), which reduces the energy required to charge and discharge the gate, thereby minimizing the drive power needed and further improving the efficiency of the overall system.

In summary, the ZXM62N02E6TA from Diodes Incorporated is a robust, efficient, and reliable component for designers looking to optimize their power management solutions. Its electrical characteristics, combined with its physical form factor, make it an excellent choice for a broad spectrum of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7471 $52.2970
165+ $0.6131 $101.1615
255+ $0.5939 $151.4445
350+ $0.5747 $201.1450
450+ $0.5556 $250.0200
605+ $0.4981 $301.3505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,200 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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