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ZVN4206ASTZ

Part No ZVN4206ASTZ
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 60V 0.6A TO92-3
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 600mA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 1Ohm at 1.5A, 10V
Vgs(th) (Maximum) at Id 3V at 1mA
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 100pF at 25V
Power Dissipation (Maximum) 700mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package E-Line (TO-92 compatible)
Manufacturer Package E-Line-3
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802383-ZVN4206ASTZ
Ultra Librarian 3D Model Ultra Librarian ZVN4206ASTZ CAD Model

Description

The ZVN4206ASTZ is a high-performance N-Channel Enhancement Mode Vertical DMOS FET designed and manufactured by Diodes Incorporated. This MOSFET is well-suited for a wide range of applications requiring efficient power management and high reliability. It is commonly used in solenoid and relay drivers, DC-DC converters, and various types of switching applications.

Key Features

  • High Current Handling: The ZVN4206ASTZ can handle continuous drain currents up to 600mA, making it capable of driving moderately high current loads with ease.
  • High Breakdown Voltage: With a drain-source voltage (Vds) of 60V, it can be used in circuits that experience high voltage spikes without the risk of breakdown.
  • Low On-Resistance: The low on-state resistance (Rds(on)) of 1.2 Ohms at Vgs=10V ensures efficient operation with minimal power loss.
  • Enhanced Thermal Performance: The TO-92 package provides effective thermal management, which is crucial for maintaining stability and longevity in high-power and high-temperature applications.

Applications

The versatility of the ZVN4206ASTZ makes it an excellent choice for a variety of electronic designs. Some of the typical applications include:

  • Power Management Circuits
  • Motor Control Systems
  • LED Drivers
  • Load/Relay Switching

Technical Specifications

Parameter Value Device Type N-Channel MOSFET Continuous Drain Current (Id) 600mA Drain-Source Breakdown Voltage (Vds) 60V Gate-Source Voltage (Vgs) ±20V On-Resistance (Rds(on)) 1.2 Ohms @ Vgs=10V Package TO-92

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The ZVN4206ASTZ MOSFET is designed with reliability in mind, ensuring stable performance over its operational lifespan.

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