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ZVN2110AQ

Part No ZVN2110AQ
Manufacturer Diodes Incorporated
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Diodes Incorporated
Win Source Part Number 418523-ZVN2110AQ
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN2110AQ CAD Model

Description

Introducing the ZVN2110AQ MOSFET from Diodes Incorporated

The ZVN2110AQ is a high-performance N-Channel Enhancement Mode Vertical DMOS FET designed for use in a wide range of electronic applications. Manufactured by the renowned semiconductor company Diodes Incorporated, this MOSFET is known for its reliability and efficiency. It is a versatile component that can be used in power management tasks, including switching and amplification in various electronic circuits.

The ZVN2110AQ is built to handle a continuous drain current of up to 900mA, making it suitable for moderate power handling requirements. With its low on-resistance of 5 ohms, this MOSFET ensures minimal power loss and is ideal for high-efficiency designs. The device operates at an enhancement mode, meaning it requires a positive gate voltage to turn on, providing a convenient control mechanism for designers.

One of the standout features of the ZVN2110AQ is its high input impedance, which minimizes the current required from the preceding stage, a beneficial characteristic for battery-powered devices where power conservation is critical. Additionally, the MOSFET's fast switching speed makes it an excellent choice for high-frequency applications.

The ZVN2110AQ comes in a robust SOT-223 package, which not only provides good thermal performance but also makes it easy to mount on a printed circuit board (PCB). This package is compatible with automated assembly processes, ensuring that it can be easily integrated into mass production workflows.

Key specifications of the ZVN2110AQ include:

  • Drain-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 900mA
  • Gate-Source Voltage (Vgs): ±20V
  • Power Dissipation (Pd): 1.75W
  • On-Resistance (Rds on): 5Ω

Whether you are designing power supplies, motor controllers, or any circuit requiring efficient switching, the ZVN2110AQ provides a reliable and cost-effective solution. Its robust design and excellent electrical characteristics make it a go-to choice for engineers and designers looking for a high-quality N-Channel MOSFET.

For more detailed information, including datasheets, application notes, and support, visit the Diodes Incorporated website or contact their support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6468 $58.2120
220+ $0.5313 $116.8860
340+ $0.5140 $174.7600
465+ $0.4978 $231.4770
600+ $0.4816 $288.9600
805+ $0.4320 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,820 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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