Product Overview: MMBT3904R-01DK-7-F

The MMBT3904R-01DK-7-F from Diodes Incorporated is a high-performance, small signal NPN bipolar junction transistor (BJT) specifically designed for general-purpose amplifier and switching applications. This versatile transistor is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained applications.

Key Features

• Transistor Type: The MMBT3904R-01DK-7-F is an NPN BJT, which is commonly used for amplification and switching purposes.
• High Current Gain: This transistor offers a high current gain (hFE), ensuring efficient current amplification in electronic circuits.
• Low Voltage Operation: It operates at low voltages, making it suitable for low-power applications.
• Surface-Mount Package: The SOT-23 package is designed for automated assembly processes, facilitating mass production and ensuring reliability.
• RoHS Compliant: The MMBT3904R-01DK-7-F is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.

Applications

The MMBT3904R-01DK-7-F transistor is utilized in a wide array of electronic devices and circuits. Some of the typical applications include:

• Signal amplification in audio and video equipment
• Driver stages in amplifiers
• Switching operations in digital devices
• Power management in portable electronics
• Control circuits in embedded systems

Product Specifications

The MMBT3904R-01DK-7-F boasts impressive electrical characteristics that make it a preferred choice for designers:

• Collector-Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 6V
• Continuous Collector Current (IC): 200mA
• Power Dissipation (Pd): 225mW
• Operating and Storage Junction Temperature Range: -55°C to +150°C

With its robust performance and compact form factor, the MMBT3904R-01DK-7-F from Diodes Incorporated is an excellent choice for a wide range of electronic applications where efficiency and reliability are paramount.