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DMT8012LSS-13

Part No DMT8012LSS-13
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CHA 80V 9.7A SO8 / 80V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) at 25°C 9.7A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 16.5mOhm at 12A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1949pF at 40V
Power Dissipation (Maximum) 1.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801330-DMT8012LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT8012LSS-13 CAD Model

Description

DMT8012LSS-13: High-Performance MOSFET from Diodes Incorporated

The DMT8012LSS-13 is a state-of-the-art MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This product is tailored for optimal performance in a wide range of applications, providing efficient power management and signal amplification.

Key Features

  • Low On-Resistance: The DMT8012LSS-13 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High Power and Current Handling: This MOSFET can handle high levels of power and current without compromising performance, making it suitable for demanding applications.
  • Advanced Packaging: Enclosed in a RoHS-compliant PowerDI®3333-8 package, the DMT8012LSS-13 ensures a compact footprint along with excellent thermal performance.
  • Low Gate Charge: The device features a low gate charge, which facilitates faster switching speeds and reduces switching losses.

Applications

The versatility of the DMT8012LSS-13 allows it to be used in a variety of applications, including:

  • Power management modules
  • DC-DC converters
  • Load switches
  • Battery management systems
  • Motor drives
  • Computing and server applications

Technical Specifications

The DMT8012LSS-13 comes with a set of impressive technical specifications that underscore its performance capabilities:

  • Drain-Source Voltage (V<sub>DS): 80V
  • Continuous Drain Current (I<sub>D): 12A
  • Power Dissipation (P<sub>D): 3.8W
  • R<sub>DS(on): As low as 8.5mΩ at V<sub>GS = 10V

Quality and Reliability

Diodes Incorporated ensures that the DMT8012LSS-13 meets the highest quality and reliability standards. The device is subjected to rigorous testing and quality control measures throughout the manufacturing process. Customers can trust the DMT8012LSS-13 for consistent performance and durability in their electronic designs.

Overall, the DMT8012LSS-13 is an excellent choice for designers who require a high-performance, reliable, and efficient MOSFET for their power management and amplification needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0942 $54.7100
115+ $0.8979 $103.2585
175+ $0.8698 $152.2150
240+ $0.8417 $202.0080
310+ $0.8137 $252.2470
415+ $0.7295 $302.7425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,200 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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