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DMP2008UFG-13

Part No DMP2008UFG-13
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET P-CH 20V 14A POWERDI / 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 14A , 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 8mOhm at 12A, 4.5V
Vgs(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 72nC at 4.5V
Maximum Vgs ±8V
Input Capacitance (Ciss) (Maximum) at Vds 6909pF at 10V
Power Dissipation (Maximum) 2.4W , 41W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerDI3333-8
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 808853-DMP2008UFG-13
Ultra Librarian 3D Model Ultra Librarian DMP2008UFG-13 CAD Model

Description

Introducing the DMP2008UFG-13 P-Channel MOSFET from Diodes Incorporated

The DMP2008UFG-13 is a high-performance P-Channel enhancement mode MOSFET from the reputable semiconductor manufacturer, Diodes Incorporated. Engineered to provide efficient power management and switching capabilities, this device is a perfect fit for a wide range of applications, including load switches, power management circuits, and various other electronic devices that require a reliable P-Channel MOSFET.

Key Features

  • Low On-Resistance: The DMP2008UFG-13 boasts a low on-resistance, which translates to reduced power loss and improved efficiency during operation. This feature is critical for applications that demand high performance with minimal energy wastage.
  • High Power Dissipation: With the ability to dissipate high levels of power, this MOSFET can handle robust applications that generate significant heat, ensuring reliability and longevity.
  • Advanced Packaging: The device is housed in a PowerDI®3333-8 package, which offers a compact footprint while providing excellent thermal performance. This packaging makes it an ideal choice for space-constrained applications.
  • Voltage and Current Ratings: The DMP2008UFG-13 is designed to operate at -20V drain-source voltage (V<sub>DS) with a continuous drain current (I<sub>D) of -6.4A at 25°C. These ratings ensure that the MOSFET can handle a wide range of operating conditions.

Applications

The versatility of the DMP2008UFG-13 allows it to be utilized in various sectors, including:

  • Power management modules
  • Battery-powered devices
  • DC-DC converters
  • Load switches
  • Portable electronics

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMP2008UFG-13 is no exception. It is manufactured under strict quality control standards, ensuring that each component delivers consistent performance and reliability. Whether for industrial, commercial, or consumer applications, this MOSFET is designed to meet the rigorous demands of modern electronic circuits.

With its superior efficiency, thermal management, and robust electrical characteristics, the DMP2008UFG-13 from Diodes Incorporated stands out as an excellent choice for designers and engineers looking for a high-quality P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4407 $50.6805
280+ $0.3616 $101.2480
430+ $0.3503 $150.6290
590+ $0.3390 $200.0100
765+ $0.3277 $250.6905
1,025+ $0.2938 $301.1450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 122,963 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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