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DMN62D0LFD-7

Part No DMN62D0LFD-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description N-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET N-CH 60V 0.31A 3-DFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Part Status Last Time Buy
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 310mA
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Rds On (Maximum) at Id, Vgs 2Ohm at 100mA, 4V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 500nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 31pF at 25V
Power Dissipation (Maximum) 480mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package X1-DFN1212-3
Manufacturer Package 3-UDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 730591-DMN62D0LFD-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN62D0LFD-7 CAD Model

Description

Introducing the DMN62D0LFD-7 MOSFET from Diodes Incorporated

The DMN62D0LFD-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and miniaturized solutions for a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN62D0LFD-7 offers an exceptionally low on-resistance (R<sub>DS(on)), which results in reduced conduction losses and improved efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET enables high-speed operation, which is crucial for power management and conversion systems.
  • Low Gate Threshold Voltage: The low gate threshold voltage (V<sub>GS(th)) allows for the MOSFET to be easily driven by low-voltage control signals, making it suitable for low-power and logic-level applications.
  • Surface-Mount Package: The DMN62D0LFD-7 comes in a compact SOT-23 package, ideal for space-constrained applications and for use in surface-mount technology (SMT).
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), which ensures reliable performance under demanding conditions.

Applications

The versatility of the DMN62D0LFD-7 MOSFET makes it suitable for a broad spectrum of applications, including:

  • Power Management
  • DC/DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Control Circuits
  • Portable Electronic Devices

Quality and Reliability

Diodes Incorporated ensures that the DMN62D0LFD-7 MOSFET meets the highest quality and reliability standards. Each device undergoes rigorous testing and quality control measures to guarantee performance in various environments and applications.

Whether you're designing power supplies, consumer electronics, or automotive systems, the DMN62D0LFD-7 from Diodes Incorporated offers the efficiency, speed, and compact size needed to enhance your product's performance. Its robust design and energy-saving characteristics make it an excellent choice for your next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
770+ $0.0752 $57.9040
1,645+ $0.0704 $115.8080
2,555+ $0.0679 $173.4845
3,665+ $0.0631 $231.2615
4,765+ $0.0607 $289.2355
5,955+ $0.0582 $346.5810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 770 pcs
Order Increment : 1 pcs
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