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DMN33D8LV-7

Part No DMN33D8LV-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 25V~30V SOT563 T&R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Rds On (Max) @ Id, Vgs 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 48pF @ 5V
Power - Max 430mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Base Product Number DMN33
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376889-DMN33D8LV-7
Ultra Librarian 3D Model Ultra Librarian DMN33D8LV-7 CAD Model

Description

Diodes Incorporated DMN33D8LV-7 MOSFET

The DMN33D8LV-7 from Diodes Incorporated is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) that is designed for power switching applications. This MOSFET is a part of Diodes Incorporated's extensive range of semiconductor products, known for their reliability and efficiency. With its compact SOT-23 package, the DMN33D8LV-7 is ideal for space-constrained applications where a small footprint is essential.

The DMN33D8LV-7 boasts a drain-source voltage (V<sub>DS) of 30V, which makes it suitable for a variety of mid-range voltage applications. This MOSFET can handle continuous drain currents (I<sub>D) up to 7.5A, ensuring robust performance for a wide range of electronic circuits. Its low on-resistance (R<sub>DS(on)) of just 20mΩ at V<sub>GS = 10V allows for efficient operation with minimal power loss, making it an energy-efficient choice for designers.

One of the key features of the DMN33D8LV-7 is its low threshold voltage (V<sub>GS(th)), which permits the MOSFET to be driven at lower gate voltages, thus reducing the power required for switching. This characteristic is particularly beneficial in battery-powered devices where power conservation is crucial.

The DMN33D8LV-7 also incorporates advanced trench technology, which contributes to its low on-resistance and high switching speeds. This technology also enhances the device's thermal performance, ensuring it operates reliably over a broad temperature range. The MOSFET is characterized by its fast switching speed, which is vital for high-frequency applications, and it supports a maximum junction temperature of 150°C.

Applications for the DMN33D8LV-7 are diverse and include power management in portable devices, DC-DC converters, load switches, and other power-related functions in consumer electronics, telecommunications, and computing. Its robustness and efficiency also make it suitable for industrial and automotive applications where high reliability and performance are required.

Overall, the DMN33D8LV-7 from Diodes Incorporated is a versatile and reliable component that offers designers a balance of performance, power efficiency, and compact packaging, suitable for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1157 $50.3295
1,055+ $0.0950 $100.2250
1,635+ $0.0920 $150.4200
2,250+ $0.0890 $200.2500
2,905+ $0.0861 $250.1205
3,890+ $0.0772 $300.3080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,360 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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