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DMN3013LDG-13

Part No DMN3013LDG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 25V-30V POWERDI333  /  Mosfet Array 2 N-Channel (Dual) 30V 9.5A (Ta), 15A (Tc) 2.16W (Ta) Surface Mount PowerDI3333-8 (Type D)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs 14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V
Power - Max 2.16W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerLDFN
Supplier Device Package PowerDI3333-8 (Type D)
Base Product Number DMN3013
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1055764-DMN3013LDG-13
Ultra Librarian 3D Model Ultra Librarian DMN3013LDG-13 CAD Model

Description

DMN3013LDG-13 MOSFET Overview

The DMN3013LDG-13 from Diodes Incorporated is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) that offers excellent power efficiency and reliability for a wide range of applications. This MOSFET is designed using advanced trench technology to provide superior on-resistance and a high switching performance.

Key Features

  • Low On-Resistance: The DMN3013LDG-13 features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) that enables the device to handle high power applications with ease.
  • High-Speed Switching: Designed for fast switching, this MOSFET is suitable for high-frequency power switching applications.
  • PowerDI®5060-8 Package: The device comes in a compact PowerDI®5060-8 package, which ensures a small footprint and low thermal resistance.
  • RoHS Compliant: The DMN3013LDG-13 is compliant with RoHS standards, making it suitable for use in environmentally sensitive applications.

Applications

The DMN3013LDG-13 is ideal for a variety of applications, including:

  • Power Management
  • DC-DC Converters
  • Load Switches
  • Motor Drives
  • Battery Management Systems

Technical Specifications

Some of the key technical specifications of the DMN3013LDG-13 include:

  • V<sub>DS: 30V Maximum Drain-Source Voltage
  • I<sub>D: 8.5A Continuous Drain Current
  • R<sub>DS(on): 24mΩ at V<sub>GS = 10V
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMN3013LDG-13 MOSFET is subjected to rigorous testing and quality control measures to ensure it meets the highest industry standards for performance and reliability.

Ordering Information

The DMN3013LDG-13 is available in tape and reel packaging, facilitating easy integration into automated manufacturing processes. For detailed ordering and shipping information, please refer to the Diodes Incorporated official website or contact an authorized distributor.

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