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DMN3012LDG-7

Part No DMN3012LDG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 25V-30V POWERDI333 / Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta), 20A (Tc) 2.2W (Tc) Surface Mount PowerDI3333-8 (Type D)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 15V, 1480pF @ 15V
Power - Max 2.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerLDFN
Supplier Device Package PowerDI3333-8 (Type D)
Base Product Number DMN3012
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1055763-DMN3012LDG-7
Ultra Librarian 3D Model Ultra Librarian DMN3012LDG-7 CAD Model

Description

Product Overview: DMN3012LDG-7

The DMN3012LDG-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is part of their extensive range of power management devices, which are engineered to deliver efficiency and reliability for a wide array of applications.

Key Features

  • Low On-Resistance: The DMN3012LDG-7 boasts an impressively low on-resistance (RDS(ON)), which minimizes conduction losses and enhances overall efficiency, making it suitable for power-intensive applications.
  • High Continuous Drain Current: It supports a high continuous drain current (ID), providing the capability to handle significant power and current without performance degradation.
  • PowerDI™ 123 Package: Housed in a compact PowerDI™ 123 package, the DMN3012LDG-7 offers a space-saving solution without compromising on power handling capabilities. This package is designed for optimal thermal performance and reliability.
  • Low Threshold Voltage: The device features a low threshold voltage (VGS(th)), ensuring that it can be easily driven by low-voltage logic signals, making it compatible with modern microcontrollers and digital circuits.

Applications

The DMN3012LDG-7 is well-suited for a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Modules
  • High-Efficiency Power Supplies

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMN3012LDG-7 is produced with stringent quality control measures and is designed to meet or exceed industry standards for performance and reliability. This ensures that customers can integrate the DMN3012LDG-7 into their designs with confidence, knowing they are using a component that will deliver consistent performance over time.

Environmental Compliance

The DMN3012LDG-7 is RoHS compliant and free from environmentally harmful substances, reflecting Diodes Incorporated's dedication to environmental stewardship. This commitment ensures that the product is suitable for use in a wide range of markets, including those with strict environmental regulations.

With its robust feature set and reliable performance, the DMN3012LDG-7 from Diodes Incorporated stands out as a superior choice for designers seeking an efficient and durable N-Channel MOSFET for their power management needs.

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