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DMN2065UWQ-7

Part No DMN2065UWQ-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 20V 3.1A SOT323 / 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 3.1A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 56mOhm at 2A, 4.5V
Vgs(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 5.4nC at 4.5V
Maximum Vgs ±12V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 10V
Power Dissipation (Maximum) 700mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-323
Manufacturer Package SC-70, SOT-323
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803559-DMN2065UWQ-7
Ultra Librarian 3D Model Ultra Librarian DMN2065UWQ-7 CAD Model

Description

DMN2065UWQ-7 MOSFET by Diodes Incorporated

The DMN2065UWQ-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed using advanced trench technology to provide superior performance in a wide range of electronic applications.

The device features a drain-source voltage (V<sub>DS) of 20V, a continuous drain current (I<sub>D) of 4.2A, and a power dissipation (P<sub>D) of 1.25W, making it an excellent choice for power management tasks. The low threshold voltage ensures that the DMN2065UWQ-7 can be driven by low-voltage logic signals, enhancing its compatibility with modern microcontrollers and digital circuits.

One of the standout characteristics of the DMN2065UWQ-7 is its ultra-small leadless DFN2020 package, which measures just 2mm x 2mm. This compact footprint makes it an ideal solution for space-constrained applications, allowing designers to minimize PCB size without sacrificing performance. Additionally, the package is RoHS compliant, adhering to environmental regulations and promoting the use of safer materials in electronics.

The DMN2065UWQ-7 also boasts a low on-resistance (R<sub>DS(on)) of just 54mΩ at V<sub>GS = 4.5V. This low R<sub>DS(on) translates to reduced conduction losses and improved efficiency, which is critical for battery-powered devices and energy-sensitive systems. Furthermore, the device's fast switching speed enhances overall circuit responsiveness and supports high-frequency operation.

Applications for the DMN2065UWQ-7 are diverse and include power management for portable devices, load switches, battery protection circuits, and DC-DC converters. Its reliability and efficiency also make it suitable for use in industrial control systems, telecom infrastructure, and computing devices.

In summary, the DMN2065UWQ-7 from Diodes Incorporated is a versatile and efficient N-Channel MOSFET that combines a compact form factor with high-performance specifications, making it a top choice for designers looking to optimize power management in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
395+ $0.1282 $50.6390
835+ $0.1200 $100.2000
1,300+ $0.1158 $150.5400
1,860+ $0.1076 $200.1360
2,420+ $0.1034 $250.2280
3,025+ $0.0993 $300.3825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 101,317 pieces
MOQ: 395 pcs
Order Increment : 1 pcs
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