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DMN2005UFG

Part No DMN2005UFG
Manufacturer Diodes Incorporated
Catalog END - OF - LIFE
Description Qualified to AEC-Q101 Standards for High Reliability
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Manufacturer Diodes Incorporated
Win Source Part Number 1168117-DMN2005UFG
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN2005UFG CAD Model

Description

Product Overview: DMN2005UFG MOSFET by Diodes Incorporated

The DMN2005UFG is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, tailored to meet the requirements of modern, compact electronic applications.

Key Features

  • Low On-Resistance: The DMN2005UFG boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides rapid transitions, making it ideal for high-frequency power switching and load management.
  • Low Threshold Voltage: With a low gate threshold voltage (V<sub>GS(th)), this component ensures low-voltage operation, enabling it to be used in logic-level applications.
  • Surface-Mount Package: The DMN2005UFG comes in a compact SOT-23 package, which is suitable for automated assembly processes and helps to save valuable board space.

Applications

The versatility of the DMN2005UFG makes it suitable for a wide range of applications, including:

  • Power management in portable and battery-powered devices
  • DC-DC converters
  • Load switches
  • Motor control circuits
  • Switching regulators

Electrical Characteristics

The DMN2005UFG operates within a drain-source voltage (V<sub>DS) of 20V, and can sustain a continuous drain current (I<sub>D) of 540mA. Its maximum power dissipation (P<sub>D) is 350mW, making it suitable for handling moderate power levels in electronic circuits. The device also features a maximum junction temperature of 150°C, ensuring reliable operation under a range of thermal conditions.

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The DMN2005UFG is designed with robustness in mind, meeting stringent quality standards to ensure reliable performance and longevity in the field.

Conclusion

Overall, the DMN2005UFG from Diodes Incorporated represents a blend of efficiency, speed, and compact design, making it a prime choice for designers looking to optimize their power management solutions in space-constrained and power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5505 $57.8025
260+ $0.4518 $117.4680
400+ $0.4377 $175.0800
550+ $0.4236 $232.9800
710+ $0.4093 $290.6030
945+ $0.3671 $346.9095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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