DMN10H170SK3 - N-Channel Enhancement Mode MOSFET

The DMN10H170SK3 is a high-performance N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, catering to a wide array of applications, including but not limited to power supplies, DC-DC converters, and motor drives.

With its advanced silicon technology, the DMN10H170SK3 offers excellent on-state resistance (R_DS(on)) with a low gate charge (Q_g), making it an efficient choice for high-efficiency power management designs. The device is characterized by its ability to handle continuous drain currents (I_D) and its robust thermal performance, ensuring reliability and longevity even under demanding operating conditions.

Key Features:

• V_DS (Drain-Source Voltage): 100V
• I_D (Continuous Drain Current): 6.5A
• R_DS(on) (Static Drain-Source On-Resistance): 170 mΩ at V_GS = 10V
• Low gate charge for faster switching
• High power and current handling capability
• High-performance trench technology for enhanced reliability

The device is housed in a compact, surface-mount DFN2020-3 package, which is not only space-efficient but also offers superior thermal resistance. This packaging is designed to optimize the thermal conduction path, thereby reducing the overall thermal resistance and enhancing the thermal performance of the device. The DMN10H170SK3 is also RoHS compliant, ensuring that it meets the latest environmental standards and regulations.

Applications for the DMN10H170SK3 are diverse, ranging from power management in portable devices, lighting solutions, and telecom infrastructure to automotive systems and renewable energy applications. Its high efficiency and power density make it an ideal choice for designers looking to optimize their power systems for both performance and size.

The DMN10H170SK3 from Diodes Incorporated represents a blend of innovation, performance, and reliability, making it a go-to MOSFET for engineers and designers seeking to enhance their power management solutions.