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DMN10H170SFG-7

Part No DMN10H170SFG-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 100V 2.9A POWERDI / Qualified to AEC-Q101 Standards for High Reliability
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 2.9A , 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 122mOhm at 3.3A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14.9nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 870.7pF at 25V
Power Dissipation (Maximum) 940mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerDI3333-8
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806714-DMN10H170SFG-7
Ultra Librarian 3D Model Ultra Librarian DMN10H170SFG-7 CAD Model

Description

DMN10H170SFG-7 - N-Channel Enhancement Mode Field Effect Transistor

The DMN10H170SFG-7 is a high-performance N-Channel Enhancement Mode Field Effect Transistor (FET) from Diodes Incorporated, designed for power management applications. This FET leverages the latest technology to provide efficient power conversion with minimal losses, making it an ideal choice for a wide range of electronic devices.

Key Features:

  • Low On-Resistance: The DMN10H170SFG-7 features a low on-resistance of typically 170 mΩ at VGS = 10V, which translates to reduced conduction losses and improved efficiency in power conversion circuits.
  • High Continuous Drain Current: It can handle a continuous drain current of up to 3.8A, allowing it to drive moderate loads with ease.
  • High Voltage Capability: With a drain-source voltage (VDS) of 100V, this FET can be utilized in circuits with higher operating voltages, offering greater flexibility in design.
  • Fast Switching Speed: The device boasts fast switching speed, which is essential for reducing switching losses in applications such as DC-DC converters, motor drives, and power inverters.
  • PowerDI®5060-8 Package: The DMN10H170SFG-7 comes in a compact, surface-mount PowerDI®5060-8 package, which ensures a small footprint on the PCB and aids in thermal management.

Applications:

  • DC-DC Converters
  • Power Management Functions
  • Battery Management Systems
  • Load Switches
  • Motors and Motor Control Circuits
  • Power Inverters

The DMN10H170SFG-7 is RoHS compliant and halogen-free, adhering to the latest environmental standards. Its robustness is further highlighted by its capability to withstand repetitive avalanche events, ensuring reliability and a long operational life. Whether for industrial, commercial, or consumer applications, the DMN10H170SFG-7 from Diodes Incorporated is an excellent choice for designers looking for a high-efficiency, high-performance N-Channel FET.

For detailed specifications and application guidance, engineers and designers are encouraged to consult the datasheet and technical resources available from Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2027 $50.6750
605+ $0.1664 $100.6720
935+ $0.1612 $150.7220
1,285+ $0.1560 $200.4600
1,660+ $0.1508 $250.3280
2,220+ $0.1352 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,735 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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