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DMN1032UCB4-7-55

Part No DMN1032UCB4-7-55
Manufacturer Diodes Incorporated
Catalog Custom Parts (B - D)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1117950-DMN1032UCB4-7-55
Categories Custom Parts
Manufacturer Diodes Incorporated
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN1032UCB4-7-55 CAD Model

Description

Product Overview: DMN1032UCB4-7-55 from Diodes Incorporated

The DMN1032UCB4-7-55 is a cutting-edge N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This particular MOSFET is designed to provide efficient power management and signal processing in a wide range of applications, making it a versatile component for modern electronic devices.

Key Features

  • Low On-Resistance: The DMN1032UCB4-7-55 boasts an impressively low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET provides quick response times, essential for high-performance power supplies and converters.
  • Low Threshold Voltage: The device operates at a low gate threshold voltage, making it suitable for low-voltage applications and ensuring ease of use in various circuit designs.
  • Surface Mount Package: Housed in a compact, surface-mount DFN2020-6 package, the DMN1032UCB4-7-55 is designed for space-saving PCB layouts and is ideal for densely packed electronic assemblies.
  • RoHS Compliant: Complying with the RoHS directive, this product is free from hazardous substances, making it an environmentally friendly choice for electronic manufacturers.

Applications

The DMN1032UCB4-7-55 is suitable for a variety of applications, including:

  • Power management modules
  • DC-DC converters
  • Battery-powered devices
  • Load switches
  • Motor control circuits

Technical Specifications

With a continuous drain current of up to 7.5A and a drain-source voltage of 30V, the DMN1032UCB4-7-55 is capable of handling significant power levels. The device also features a maximum power dissipation of 2.5W, ensuring reliable operation under various conditions.

Overall, the DMN1032UCB4-7-55 from Diodes Incorporated is a high-performance solution for designers seeking a robust, efficient, and compact MOSFET for their next project. Its combination of low on-resistance, high-speed switching, and eco-friendly design makes it a top choice for modern electronic applications.

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