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DMG1012T-7-F

Part No DMG1012T-7-F
Manufacturer Diodes Incorporated
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Diodes Incorporated
Win Source Part Number 252593-DMG1012T-7-F
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMG1012T-7-F CAD Model

Description

Product Overview: DMG1012T-7-F by Diodes Incorporated

The DMG1012T-7-F is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This compact and efficient MOSFET is a testament to Diodes Incorporated's commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry.

Encased in a small SOT-523 package, the DMG1012T-7-F offers a space-saving solution for a wide range of applications. Its low on-resistance (R<sub>DS(on)) ensures minimal power loss and heat generation, making it an ideal choice for power management tasks in portable and battery-powered devices. The MOSFET operates at a continuous drain current (I<sub>D) of 540 mA, which allows for a good balance between current handling capability and size constraints.

With a threshold voltage (V<sub>GS(th)) as low as 0.8V, this component can be easily driven by low-voltage logic signals, simplifying the interface with microcontrollers and other logic devices. This feature is particularly useful in low-power applications where maintaining a high efficiency is critical.

The DMG1012T-7-F also features fast switching speeds, which are essential for high-frequency applications such as DC-DC converters, motor control circuits, and power management systems. Its robustness is further enhanced by its ability to withstand high energy pulses in the avalanche and commutation modes, making it a reliable component for demanding environments.

Diodes Incorporated has also taken measures to ensure the DMG1012T-7-F meets environmental standards. The product is RoHS compliant, reflecting the company's dedication to reducing the environmental impact of its products. This compliance ensures that the MOSFET can be used in applications sold in Europe and other regions with strict environmental regulations.

In summary, the DMG1012T-7-F from Diodes Incorporated is a versatile, efficient, and reliable N-channel MOSFET that provides designers with a compact solution for a myriad of electronic applications. Its low on-resistance, high current handling, and fast switching capabilities, combined with compliance to environmental standards, make it an excellent choice for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,770+ $0.0283 $50.0910
3,760+ $0.0266 $100.0160
5,840+ $0.0257 $150.0880
8,370+ $0.0239 $200.0430
10,870+ $0.0230 $250.0100
13,575+ $0.0221 $300.0075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 140,920 pieces
MOQ: 1770 pcs
Order Increment : 1 pcs
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