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DMC3016LNS-7

Part No DMC3016LNS-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 31V 40V POWERDI333
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type N and P-Channel Complementary
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 9A , 6.8A
Rds On (Maximum) at Id, Vgs 16mOhm at 7A, 10V, 28mOhm at 7A, 10V
Vgs(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 9.5nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 1184pF at 15V, 1188pF at 15V
Power - Max 1.3W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-PowerVDFN
Supplier Device Package PowerDI3333-8
Manufacturer Pack Quantity 2,000
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806713-DMC3016LNS-7
Ultra Librarian 3D Model Ultra Librarian DMC3016LNS-7 CAD Model

Description

DMC3016LNS-7 - Diodes Incorporated

The DMC3016LNS-7 is a state-of-the-art MOSFET transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This product stands out for its efficiency and reliability in a variety of electronic applications.

Key Features:

  • Device Type: This product is a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), which is a type of transistor used for amplifying or switching electronic signals.
  • Configuration: The DMC3016LNS-7 comes in a dual configuration, meaning it contains two MOSFETs in one package, which is ideal for applications that require matched pair transistors.
  • Channel Type: It is an N-Channel MOSFET, which is typically used for high-speed switching applications.
  • Drain-Source Voltage (VDS): The maximum drain-source voltage is 30V, making it suitable for a range of mid-voltage applications.
  • Continuous Drain Current (ID): This device can support a continuous drain current of 8.5A, ensuring robust performance for high-current operations.
  • Power Dissipation: The DMC3016LNS-7 is capable of dissipating up to 2.5W of power, which is indicative of its ability to handle significant levels of power without overheating.
  • RDS(on): It features a low on-resistance of 20mΩ at VGS = 10V, which translates to reduced power loss and improved efficiency.
  • Package: Enclosed in a compact SOT-23 package, the transistor is designed for surface-mount technology (SMT), allowing for efficient assembly and saving valuable board space.

Applications:

The DMC3016LNS-7 is versatile and can be used in a wide array of electronic circuits and systems. Common applications include power management, load switch, and power conversion systems. Its efficiency and thermal performance make it particularly suitable for portable and battery-powered devices, as well as for industrial and automotive applications where energy efficiency is crucial.

With its robust design and Diodes Incorporated's reputation for quality, the DMC3016LNS-7 is a reliable choice for designers and engineers looking to incorporate a high-performance N-Channel MOSFET into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5638 $50.7420
220+ $0.4627 $101.7940
335+ $0.4482 $150.1470
465+ $0.4337 $201.6705
600+ $0.4193 $251.5800
800+ $0.3759 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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