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Same model may have multiple batches, images only for reference.
S34MS08G201BHB000 Real Image
Same model may have multiple batches, images only for reference.

S34MS08G201BHB000

Part No S34MS08G201BHB000
Manufacturer Cypress Semiconductor Corp
Catalog Memory
Description IC FLASH 8GBIT PARALLEL 63BGA / FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 45 ns 63-BGA (11x9)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series Automotive, AEC-Q100, MS-2
Package Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 8Gb (1G x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Access Time 45 ns
Voltage - Supply 1.7V ~ 1.95V
Temperature Range - Operating -40°C ~ 105°C (TA)
Mounting SMD (SMT)
Package / Case 63-VFBGA
Supplier Device Package 63-BGA (11x9)
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 210
Win Source Part Number 1141238-S34MS08G201BHB000
Ultra Librarian 3D Model Ultra Librarian S34MS08G201BHB000 CAD Model

Description

The 1141238-S34MS08G201BHB000 is a non-volatile 8Gb (1G x 8) FLASH NAND memory with a package/case of 63-VFBGA and a supplier device package of 63-BGA (11x9).

  • Product Name: 1141238-S34MS08G201BHB000
  • Memory Type: FLASH NAND
  • Memory Size: 8Gb (1G x 8)
  • Package/Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
  • Access Time: 45 ns
  • Voltage Supply: 1.7V ~ 1.95V
  • Write Cycle Time: 45ns
  • Memory Interface: Parallel
  • Application: Automotive
  • AEC-Q100: Yes
  • MS-2: Yes
  • Operating Temperature: -40°C ~ 105°C (TA)
  • REACH: Unaffected

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