The FM25V20-GTR is a 2-Mbit (262,144 x 8) Serial (SPI) F-RAM (Ferroelectric Random Access Memory). This nonvolatile memory reads and writes like a standard RAM, offering advantages over other nonvolatile memories such as EEPROM and Flash. The FM25V20-GTR excels in applications requiring frequent or rapid writes, offering superior endurance and speed.

Applications:

• Data logging
• Metering
• Industrial controls
• Medical devices
• Wearable electronics

Features:

• 2-Mbit (262,144 x 8) nonvolatile memory
• High-endurance: 100 trillion (10¹⁴) read/write cycles
• Fast write capability: NoWrite delays
• Advanced high-reliability ferroelectric technology
• SPI interface: Up to 40 MHz bus speed
• Low power consumption: Active current of 7 mA (typical) at 40 MHz
• Sleep mode current of 10 μA (typical)
• Data retention: 151 years
• Operating voltage: 2.7V to 3.6V
• Operating temperature: -40°C to +85°C
• RoHS compliant

Benefits:

• Superior endurance: F-RAM technology eliminates the write endurance limitations of EEPROM and Flash memories, making it suitable for applications with frequent write operations.
• Fast write speeds: Instantaneous write capability eliminates the need for write delays, resulting in faster system performance.
• Low power consumption: Low active and sleep mode currents contribute to energy efficiency, especially beneficial in battery-powered applications.
• Reliable data retention: Guarantees data integrity for an extended period without the need for battery backup.
• Simple interface: SPI interface simplifies integration with microcontrollers and other digital systems.

The FM25V20-GTR is available in an 8-lead SOIC package. It is designed for surface mount assembly and is fully compliant with RoHS standards, ensuring environmentally friendly manufacturing.