The CY7B161-10DC is a high-speed BiCMOS Synchronous Static RAM (SSRAM) device from Cypress Semiconductor. This device is organized as 64K x 9 and operates at a high frequency with a low latency. The synchronous design allows for simplified memory interfacing with high-performance processors and systems.

Applications

• High-speed cache memory
• Network switches and routers
• Digital signal processing (DSP)
• Image processing
• High-performance computing

Features

• Fast clock cycle time: 10 ns
• Single 3.3V power supply
• Synchronous operation
• Internal input resistors
• Byte Write Enable
• Available in a 100-TQFP package

Benefits

• High-speed operation enables faster data access and improved system performance.
• Synchronous operation simplifies memory interfacing, reduces complexity, and increases system reliability.
• Internal input resistors minimize external components and simplify board layout.
• The byte write enable feature allows for selective byte writes within a word.
• The 100-TQFP package offers a compact size for space-constrained applications.

Additional Details

The CY7B161-10DC is designed for high-bandwidth memory applications requiring fast data access. The synchronous interface allows the SRAM to operate in lockstep with the system clock, simplifying timing and control logic. This SRAM offers a high degree of noise immunity due to its differential inputs. The device also features an internal burst counter for sequential memory access. It is a reliable solution for memory-intensive applications requiring high speed and performance. Its advanced BiCMOS technology ensures optimized power consumption and performance. It operates over a commercial temperature range. Its fast access times and high bandwidth make it well-suited for caching and buffering applications. The simplified interface minimizes design effort. This SSRAM is designed to meet the stringent performance requirements of modern high-speed systems.