The CY14V104LA-BA45XIES is a 4-Mbit (512 K × 8) nonvolatile Static RAM (nvSRAM) manufactured by Cypress Semiconductor. This nvSRAM combines the fast access times of SRAM with the nonvolatile data storage of flash memory. It's designed for applications requiring frequent data logging or storage where data integrity is critical, even during power loss.

Applications:

• Data logging systems
• Industrial control
• Medical devices
• Networking equipment
• Point-of-sale (POS) terminals

Features:

• 4-Mbit (512 K × 8) nvSRAM
• Unlimited write cycles to SRAM
• Automatic STORE on power-down
• RECALL to SRAM on power-up
• Fast access time
• 3.0V to 3.6V operating voltage
• RoHS compliant
• Available in a 48-ball FBGA package

Benefits:

• Provides reliable data retention during power loss without external batteries.
• Fast access times ensure quick data retrieval.
• Unlimited write cycles eliminate concerns about memory wear-out.
• Automatic STORE and RECALL functions simplify system design.
• Reduces system complexity and cost by eliminating the need for battery backup.
• High endurance and reliability make it suitable for demanding applications.

Additional Details:

The CY14V104LA-BA45XIES nvSRAM integrates a standard SRAM memory cell with a nonvolatile element in each memory location. During normal operation, the device functions as a standard SRAM with fast read and write access times. When power is lost, data is automatically transferred from the SRAM to the nonvolatile memory using an internal STORE operation. Upon power-up, data is automatically transferred back from the nonvolatile memory to the SRAM using an internal RECALL operation. These STORE and RECALL operations are automatic and transparent to the user. The device operates over a voltage range of 3.0V to 3.6V. The 48-ball FBGA package allows for high-density mounting on printed circuit boards. The nvSRAM is designed for high endurance and reliability, making it suitable for use in critical applications.