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CY14V101NA-BA25XI

Part No CY14V101NA-BA25XI
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description nvSRAM 64Kx16
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455478-CY14V101NA-BA25XI
Manufacturer Cypress Semiconductor Corp
Package Tray;Tray
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 1Mbit
Memory Organization 64K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Ultra Librarian 3D Model Ultra Librarian CY14V101NA-BA25XI CAD Model

Description

The CY14V101NA-BA25XI, manufactured by Cypress Semiconductor, represents a sophisticated blend of static RAM and non-volatile memory, encapsulated in a 64Kx16 configuration. This unique nvSRAM (non-volatile SRAM) combines the high-speed access of SRAM with the persistent storage capability of non-volatile memory. The device guarantees data retention without the need for an external battery, leveraging advanced quantum trap technology. With its 64Kx16 architecture, it provides a total memory capacity of 1,024 kilobits. Primarily designed for applications where data preservation and instant access are critical, such as in RAID systems, industrial control, and metering systems, this nvSRAM ensures data integrity even after power loss. Its '-BA25XI' part number classification defines the package type and operational specifics, such as temperature range, signifying its suitability for extreme conditions and its reliability in securing crucial data.

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