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CY14B104NA-BA25XIT

Part No CY14B104NA-BA25XIT
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description nvSRAM 256kx16 (4Mb)
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455598-CY14B104NA-BA25XIT
Manufacturer Cypress Semiconductor Corp
Package Tape & Reel (TR)
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Ultra Librarian 3D Model Ultra Librarian CY14B104NA-BA25XIT CAD Model

Description

The CY14B104NA-BA25XIT by Cypress is a 4Mb (megabit) non-volatile SRAM (nvSRAM) organized as 256K words by 16 bits. This memory component combines the high speed and infinite read/write cycle stamina of SRAM with the non-volatility of EEPROM, ensuring data retention without a battery backup. Its unique design enables instant non-volatile storage of data upon power loss through an internally integrated quantum trap storage element, making it ideal for critical data logging applications where data integrity upon power failure is crucial. The CY14B104NA-BA25XIT operates over an extended temperature range, making it well-suited for various applications, including industrial control and automation, server systems, and automotive electronics. Cypress's technology ensures swift access times and high reliability, facilitating efficient system design.

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