The CMPT5401 is a PNP Silicon Epitaxial Planar Transistor manufactured by Central Semiconductor Corp. It is designed for use in a variety of general purpose amplifier and switching applications.

Applications:

• General Purpose Amplification
• Switching Circuits
• Driver Stages
• Linear Regulators

Features:

• Low Collector-Emitter Saturation Voltage
• High Current Gain
• Low Output Capacitance
• Halogen Free
• Surface Mount Package

Benefits:

• Efficient Amplification: The high current gain ensures efficient amplification of signals.
• Fast Switching Speed: Suitable for high-speed switching applications due to its design.
• Compact Design: The surface mount package allows for compact circuit designs.
• Reliable Performance: Provides stable and reliable performance in various operating conditions.

Additional Details:

The CMPT5401 transistor is housed in a SOT-23 package. Its key electrical characteristics include a Collector-Base Voltage (VCBO) of -160V, a Collector-Emitter Voltage (VCEO) of -150V, and an Emitter-Base Voltage (VEBO) of -5V. It also features a continuous Collector Current (IC) of -600mA and a peak Collector Current (ICM) of -1A. The transistor's power dissipation is 350mW. The operating and storage junction temperature range is -65°C to +150°C.

The hFE, or DC Current Gain, is typically between 40 and 120, which allows it to effectively amplify signals. The saturation voltage is very low, leading to enhanced efficiency in switching applications.

Central Semiconductor Corp. manufactures the CMPT5401 to meet stringent quality standards, ensuring it meets the needs of modern electronic applications that require reliable performance and efficient operation.