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BDX88C

Part No BDX88C
Manufacturer Central Semiconductor Corp
Catalog END - OF - LIFE
Description Power Transistors
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Central Semiconductor Corp
Win Source Part Number 1153027-BDX88C
Manufacturer Homepage www.centralsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BDX88C CAD Model

Description

The BDX88C is a silicon NPN Darlington power transistor manufactured by Central Semiconductor Corp. It's designed for use in general-purpose amplifier and switching applications requiring high gain and moderate power dissipation. The Darlington configuration provides a significantly higher current gain compared to a single transistor, making it suitable for driving loads directly from low-current signal sources.

Applications

  • Power amplifiers
  • Motor control circuits
  • Switching regulators
  • Relay drivers
  • Solenoid drivers

Features

  • High DC Current Gain (hFE): Typical hFE is very high, allowing for easy interface with logic-level signals.
  • Low Saturation Voltage (VCE(sat)): Reduces power dissipation and improves efficiency when used as a switch.
  • High Collector Current (IC): Capable of handling significant load currents.
  • High Power Dissipation (PD): Designed to dissipate moderate amounts of power with appropriate heat sinking.
  • NPN Darlington Configuration: Provides high current gain with fewer components.

Benefits

  • Simplified Circuit Design: High gain reduces the need for additional amplifier stages.
  • Efficient Switching: Low saturation voltage minimizes power loss in switching applications.
  • Direct Logic Interface: Easily driven by standard logic circuits.
  • Reliable Performance: Robust design ensures stable operation in various environments.
  • Versatile Applications: Suitable for a wide range of amplifier and switching circuits.

Additional Details

The BDX88C is typically packaged in a TO-220 or similar through-hole package, facilitating easy mounting and heat sinking. Key specifications include a collector-emitter voltage (VCEO) of typically 100V, a collector current (IC) of around 15A, and a power dissipation (PD) of approximately 90W (with adequate heat sinking). The DC current gain (hFE) can range from 750 to several thousand, depending on the operating conditions. It's important to refer to the manufacturer's datasheet for precise specifications and application recommendations.

When using the BDX88C, proper heat sinking is crucial to prevent overheating and ensure reliable operation. The choice of heat sink depends on the power dissipation and ambient temperature. Additionally, care should be taken to avoid exceeding the maximum voltage and current ratings to prevent damage to the transistor.

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