The 2N3137 is a PNP silicon planar epitaxial transistor manufactured by Central Semiconductor Corp. It is designed for amplifier and switching applications, offering moderate voltage and current handling capabilities.

Applications:

• General Purpose Amplification
• Switching Circuits
• Driver Stages
• Audio Amplifiers
• Signal Processing

Features:

• Low Saturation Voltage
• High Current Gain
• Fast Switching Speed
• Low Noise Figure
• RoHS Compliant

Benefits:

• Efficient Switching: Low saturation voltage ensures efficient switching performance.
• High Amplification: High current gain allows for significant signal amplification.
• Fast Response: Fast switching speed enables use in high-frequency circuits.
• Clean Signal: Low noise figure ensures minimal signal distortion.
• Environmentally Compliant: RoHS compliance ensures adherence to environmental regulations.

Detailed Specifications:

The 2N3137 features a collector-emitter voltage (VCEO) of 40V and a collector current (IC) of 500mA. The collector-base voltage (VCBO) is 60V. The emitter-base voltage (VEBO) is 5V. The DC current gain (hFE) ranges from 40 to 120. The transistor is available in a TO-18 package, a through-hole mounting style. It is designed to operate over a wide temperature range, making it suitable for various industrial and commercial applications.

The 2N3137 is a reliable and versatile transistor suitable for a broad range of amplification and switching applications. Its robust design and consistent performance make it a popular choice for designers and engineers.