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Same model may have multiple batches, images only for reference.
2N1131 Real Image
Same model may have multiple batches, images only for reference.

2N1131

Part No 2N1131
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description LOW POWER PNP SILICON TRANSISTOR | THROUGH-HOLE TRANSISTOR-SMALL SI
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) at Ib, Ic 1.5V at 15mA, 150mA
Current - Collector Cutoff (Maximum) 100μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 150mA, 10V
Maximum Power 2W
Frequency - Transition 50MHz
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Manufacturer Pack Quantity 500
MSL Level Not Applicable
Win Source Part Number 1123630-2N1131
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N1131 CAD Model

Description

The 2N1131 is a PNP transistor manufactured by Central Semiconductor Corp.

  • Frequency Transition: 50MHz
  • Popularity: Medium
  • Maximum Power: 2W
  • Supply and Demand: Limited
  • Package: TO-205AD, TO-39-3 Metal Can
  • Temperature Range: -65°C to 200°C
  • Application: Suitable for use in various discrete semiconductor products applications.

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