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2N1131

Part No 2N1131
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description LOW POWER PNP SILICON TRANSISTOR | THROUGH-HOLE TRANSISTOR-SMALL SI
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) at Ib, Ic 1.5V at 15mA, 150mA
Current - Collector Cutoff (Maximum) 100μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 150mA, 10V
Maximum Power 2W
Frequency - Transition 50MHz
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Manufacturer Pack Quantity 500
MSL Level Not Applicable
Win Source Part Number 1123630-2N1131
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N1131 CAD Model

Description

The 2N1131 is a PNP transistor manufactured by Central Semiconductor Corp.

  • Frequency Transition: 50MHz
  • Popularity: Medium
  • Maximum Power: 2W
  • Supply and Demand: Limited
  • Package: TO-205AD, TO-39-3 Metal Can
  • Temperature Range: -65°C to 200°C
  • Application: Suitable for use in various discrete semiconductor products applications.

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