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HMC797LP5E

Part No HMC797LP5E
Manufacturer Analog Devices Inc.
Catalog RF Amplifiers
Description IC RF AMP GPS 0HZ-22GHZ 32QFN
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Category RF and Wireless - RF Amplifiers
Mfr Analog Devices Inc.
Package Strip
Product Status Obsolete
Frequency 0Hz ~ 22GHz
P1dB 27dBm
Gain 13.5dB
Noise Figure 6dB
RF Type General Purpose
Voltage - Supply 10V
Current - Supply 400mA
Mounting Type Surface Mount
Package / Case 32-VFQFN Exposed Pad
Supplier Device Package 32-QFN (5x5)
Base Product Number HMC797
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 873802-HMC797LP5E
Ultra Librarian 3D Model Ultra Librarian HMC797LP5E CAD Model

Description

The HMC797LP5E, by Analog Devices Inc., is a high-performance, GaAs pHEMT MMIC Low Noise Amplifier (LNA) designed to operate in the frequency range of 2 GHz to 20 GHz. This versatile component is ideal for a wide range of applications, including Electronic Warfare (EW), Electronic Countermeasures (ECM), radar systems, telecommunications, and space communications.

Key Features

  • Frequency Range: The LNA operates over a broad frequency range of 2 GHz to 20 GHz, making it suitable for various applications across multiple industries.
  • High Gain: It provides a high gain of 13 dB, which is consistent across the entire operating frequency band, ensuring reliable and stable signal amplification.
  • Low Noise Figure: The HMC797LP5E boasts a low noise figure of 2.2 dB, delivering excellent noise performance and enhancing the overall signal-to-noise ratio of the system.
  • Output Power: It offers a high output power (P1dB) of 19 dBm, allowing it to drive subsequent stages in the signal chain effectively without significant distortion.
  • Package: Packaged in a compact 5x5 mm QFN package, the HMC797LP5E is designed for space-constrained applications without compromising on performance.

Applications

  • Point-to-point and point-to-multipoint radios
  • Test instrumentation
  • Military & space
  • Telecommunications infrastructure
  • Fiber optic applications

Additional Information

The HMC797LP5E LNA is fabricated using a Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) process which delivers superior performance in terms of gain, noise figure, and output power. It is also internally matched to 50 Ohms, which simplifies system design by eliminating the need for external RF matching components. Moreover, the LNA includes an active bias network that provides stable current over temperature and process Beta variations, which ensures consistent performance and simplifies biasing requirements for system designers.

With its robust design and exceptional performance characteristics, the HMC797LP5E from Analog Devices Inc. is an excellent choice for designers looking to improve signal chain performance in demanding RF applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $3,880.5971 $3,880.5971
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Availability: 55 pieces
Order Increment : 1 pcs
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