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Same model may have multiple batches, images only for reference.
AOTF15B65M2 Real Image
Same model may have multiple batches, images only for reference.

AOTF15B65M2

Part No AOTF15B65M2
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog IGBTs - Single
Description IGBT 650V 15A TO220 / High short-circuit ruggedness
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 45A
Vce(on) (Maximum) at Vge, Ic 2.15V at 15V, 15A
Power - Max 36W
Switching Energy 290μJ (on), 200μJ (off)
Input Type Standard
Gate Charge 32nC
Td (on/off) at 25°C 15ns/94ns
Test Condition 400V, 15A, 20Ohm, 15V
Reverse Recovery Time (trr) 298ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806678-AOTF15B65M2
Ultra Librarian 3D Model Ultra Librarian AOTF15B65M2 CAD Model

Description

The Alpha & Omega Semiconductor Inc. 806678-AOTF15B65M2 is a high-power IGBT transistor designed for through-hole mounting. It has a maximum power rating of 36W and a maximum collector current of 30A.

  • Power Rating: 36W
  • Collector Current: 30A
  • Voltage Breakdown: 650V
  • Reverse Recovery Time: 298ns
  • Switching Energy (On): 290μJ
  • Switching Energy (Off): 200μJ
  • Gate Charge: 32nC
  • Package: TO-220
  • Operating Temperature: -55°C to 150°C

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