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Same model may have multiple batches, images only for reference.
AOK60B65H2AL
Same model may have multiple batches, images only for reference.

AOK60B65H2AL

Part No AOK60B65H2AL
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog IGBTs - Single
Description IGBT 60A
Datasheet
AOK60B65H2AL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Alpha & Omega Semiconductor Inc.
Series AlphaIGBT™
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 120 A
Current - Collector Pulsed (Icm) 180 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
Power - Max 416 W
Switching Energy 2.36mJ (on), 1.17mJ (off)
Input Type Standard
Gate Charge 84 nC
Td (on/off) @ 25°C 35ns/168ns
Test Condition 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 318 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number AOK60
Standard Package 240 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1045139-AOK60B65H2AL
Ultra Librarian 3D Model Ultra Librarian AOK60B65H2AL CAD Model

Description

The AOK60B65H2AL is a single IGBT (Insulated Gate Bipolar Transistor) designed for high power applications. It belongs to the AlphaIGBT™ series from Alpha & Omega Semiconductor Inc.

  • Maximum Power: 416W
  • Voltage Breakdown: 650V
  • Maximum Collector Current: 120A
  • Maximum Collector Pulsed Current: 180A
  • On-State Voltage: 2.5V @ 15V (Gate-Emitter Voltage) and 60A (Collector Current)
  • Reverse Recovery Time: 318ns
  • Mounting: Through-Hole
  • Package: TO-247-3
  • Status: Active Product

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