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Same model may have multiple batches, images only for reference.
AOK30B65M2 Real Image
Same model may have multiple batches, images only for reference.

AOK30B65M2

Part No AOK30B65M2
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog IGBTs - Single
Description IGBT 650V 30A TO247  /  IGBT 650 V 60 A 300 W Through Hole TO-247
Datasheet
AOK30B65M2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Alpha & Omega Semiconductor Inc.
Series Alpha IGBT™
Package Tube
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Power - Max 300 W
Switching Energy 1.02mJ (on), 410µJ (off)
Input Type Standard
Gate Charge 63 nC
Td (on/off) @ 25°C 34ns/138ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 339 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number AOK30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 785-1753
Standard Package 30
Win Source Part Number 1045138-AOK30B65M2
Ultra Librarian 3D Model Ultra Librarian AOK30B65M2 CAD Model

Description

The Alpha IGBT™ 1045138-AOK30B65M2 is a high-performance insulated gate bipolar transistor designed for use in a variety of applications, including power supplies, motor drives, and welding equipment manufactured by Alpha & Omega Semiconductor Inc.

  • Maximum Power Rating: 300 W
  • Collector-Emitter Breakdown Voltage: 650 V
  • Reverse Recovery Time: 339 ns
  • Gate Charge: 63 nC
  • Switching Energy (On): 1.02 mJ
  • Switching Energy (Off): 410 μJ
  • Package: TO-247-3
  • Mounting: Through-Hole
  • Temperature Range: -55°C to 175°C (TJ)
  • Alternate Parts: NGTB30N65IHL2WG, STGWA30M65DF2, FGH30T65UPDT-F155, IRGP4740DPBF, and IRGP4262DPBF

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