Applications

• Synchronous Rectification in AC/DC and DC/DC Converters
• Power Management in Portable Devices
• Motor Control
• Hard Switching and High Frequency Circuits

Features

• N-Channel Enhancement Mode
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• Low Gate Charge
• Halogen-Free
• RoHS Compliant

Benefits

• Increased Power Efficiency
• Reduced Switching and Conduction Losses
• Improved Thermal Performance
• Environmentally Friendly

Detailed Specifications

The AP9T15GH-HF has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 13A. The on-resistance (RDS(on)) is typically 88 mΩ at VGS = 10V. It is available in a TO-252 package for efficient heat dissipation. The operating junction temperature ranges from -55°C to +150°C. This MOSFET is optimized to minimize power losses and enhance overall system efficiency, making it a dependable choice for various power applications. The low gate charge reduces switching losses, enabling higher frequency operation. Its compliance with environmental standards makes it well-suited for modern electronic devices where efficiency and environmental responsibility are paramount. This MOSFET's robust design and electrical characteristics ensure reliable performance in demanding applications. It is particularly suitable for applications requiring high voltage and high current capabilities in a compact package.