The AP9992GP-HF is an N-channel enhancement mode MOSFET manufactured by Advanced Power Electronics Corp (APEC). It is designed for use in power management and load switching applications where efficiency and low losses are important. This device features a low on-resistance (RDS(on)) and fast switching speeds. It is halogen-free and RoHS compliant.

Applications

• Load Switching
• DC-DC Converters
• Power Management in Portable Devices
• Adapter Applications

Features

• N-Channel Enhancement Mode
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• Halogen-Free
• RoHS Compliant

Benefits

• Improved Power Efficiency
• Reduced Power Loss
• Simplified Thermal Management
• Environmentally Friendly

Detailed Specifications

The AP9992GP-HF features a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 6.8A. The on-resistance (RDS(on)) is typically 22mΩ at VGS = 10V. The device is commonly available in a SOP-8 package, which allows for efficient heat dissipation. Its robust design and compliance with environmental standards make it ideal for modern electronic devices where efficiency and environmental responsibility are critical. The operating junction temperature ranges from -55°C to +150°C. This MOSFET is designed to minimize power losses and enhance overall system performance, making it a reliable choice for various power applications. It is specifically tailored for applications requiring high power density and energy efficiency, providing a reliable solution for power management systems.