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AP9972GH

Part No AP9972GH
Manufacturer Advanced Power Electronics Corp.
Catalog Miscellaneous
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Advanced Power Electronics Corp.
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 817430-AP9972GH
Ultra Librarian 3D Model Ultra Librarian AP9972GH CAD Model

Description

The AP9972GH is a 30V N-channel enhancement mode power MOSFET from Advanced Power Electronics Corp. designed for a wide range of power management applications. This MOSFET utilizes advanced trench technology to provide excellent RDS(ON) performance, low gate charge, and fast switching speeds, making it suitable for efficient power conversion and load switching. Its robust design ensures reliable operation in demanding environments.

Applications:

  • DC-DC converters
  • Load switching
  • Power management in portable devices
  • Motor control circuits
  • Battery management systems

Features:

  • Low RDS(ON): Reduces power loss and improves efficiency.
  • Low gate charge: Enables fast switching and minimizes driver power requirements.
  • Trench technology: Optimizes performance and provides a compact die size.
  • 30V Drain-Source Voltage: Suitable for a variety of low-voltage applications.
  • Avalanche Rated: Provides robustness and reliability against transient voltage spikes.
  • RoHS Compliant: Meets environmental standards.

Benefits:

  • Improved efficiency: Low RDS(ON) minimizes conduction losses, resulting in higher energy efficiency.
  • Fast switching: Low gate charge allows for quicker switching speeds, reducing switching losses.
  • Compact design: The small footprint enables integration into space-constrained applications.
  • Enhanced thermal performance: Efficient heat dissipation improves overall system reliability.
  • Increased power density: Delivers high power output in a small form factor.

Additional Details:

The AP9972GH boasts a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 36A at a case temperature of 25°C. The typical RDS(ON) is 8.5 mΩ at VGS = 10V. It is available in a TO-252 package, which facilitates efficient heat transfer. This MOSFET is designed to operate within a junction temperature range of -55°C to +175°C. The gate-source voltage (VGS) is rated at ±20V. The device's low gate charge (Qg) contributes to its fast switching capabilities and reduces the drive power requirements.

The AP9972GH is well-suited for applications requiring efficient and reliable power switching. Its low on-resistance and fast switching characteristics make it an excellent choice for DC-DC converters, load switches, and other power management circuits. Its avalanche rating ensures that it can withstand transient voltage spikes, further enhancing its reliability in demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3419 $58.1230
415+ $0.2807 $116.4905
640+ $0.2714 $173.6960
880+ $0.2633 $231.7040
1,140+ $0.2541 $289.6740
1,525+ $0.2275 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,800 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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