The AP18N20GH-HF from Advanced Power Electronics Corp. is a high-performance N-channel power MOSFET designed for efficient power switching applications. It features a high breakdown voltage and low on-resistance, making it suitable for various power management and motor control circuits.
Applications:
- Switch-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- DC-DC converters
- Motor control
- Inverters
Features:
- High breakdown voltage: VDS = 200V
- Low on-resistance: RDS(on) = 0.065Ω (typical)
- Fast switching speed: Minimizes switching losses
- Avalanche energy rated: Robust against transient voltage spikes
- Lead-free and RoHS compliant: Environmentally friendly
- Halogen-free
Benefits:
- Improved efficiency in power conversion applications due to low on-resistance and fast switching speed.
- Reduced power dissipation, leading to lower operating temperatures and improved reliability.
- Simplified thermal management.
- Enhanced system robustness due to avalanche energy capability.
- Environmentally friendly due to lead-free and RoHS compliance and Halogen-free construction.
The AP18N20GH-HF power MOSFET is optimized for efficiency and reliability. Its high breakdown voltage ensures safe operation in high-voltage circuits. The low on-resistance minimizes conduction losses, resulting in higher efficiency and lower heat generation. The fast switching speed reduces switching losses, further contributing to overall efficiency. The avalanche energy rating guarantees the MOSFET's ability to withstand transient voltage spikes, enhancing system robustness. This feature is particularly important in applications where inductive loads are present. The lead-free and RoHS compliant construction ensures that the device meets environmental regulations. Further, this specific part is Halogen-Free. It is used extensively in switch-mode power supplies, DC-DC converters, motor control circuits, and inverters. The TO-220 package facilitates easy mounting and heatsinking. The AP18N20GH-HF is designed for applications requiring high efficiency, reliability, and environmental compliance.
Technical Specifications:
- Drain-Source Voltage (VDS): 200V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 18A
- Pulsed Drain Current (IDM): 72A
- On-Resistance (RDS(on)): 0.065Ω (typical)
- Total Gate Charge (Qg): 16 nC (typical)
- Operating Temperature: -55°C to +175°C
- Package: TO-220