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NCE70T260EF

Part No NCE70T260EF
Manufacturer Wuxi
Catalog Custom Parts (N - R)
Description TO-220F MOSFETs ROHS
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Rohs State Need to verify
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Win Source Part Number 1164855-NCE70T260EF
Categories Custom Parts
Manufacturer Wuxi
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NCE70T260EF CAD Model

Description

The NCE70T260EF is an N-channel enhancement mode power MOSFET manufactured by Wuxi NCE Power Semiconductor. It is designed for high-efficiency switching applications, typically in power supplies and motor control circuits. It features a low on-resistance (RDS(on)) to minimize power loss and fast switching speed. The '70' likely refers to a 700V voltage rating, and '260' may relate to RDS(on) or current capabilities.

Applications

  • Switching Power Supplies: For use in AC-DC and DC-DC power supplies.
  • Motor Control: Efficiently switching power to drive DC motors in various applications.
  • LED Lighting: Driving LEDs in efficient lighting solutions.
  • Battery Chargers: Controlling the charging process in battery management systems.
  • Power Inverters: Converting DC to AC power for various applications.

Features

  • N-Channel Enhancement Mode: Simplified gate drive circuitry.
  • High Voltage: Typically rated for 700V drain-source voltage (VDS).
  • Low On-Resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation for compact designs.
  • Avalanche Rated: Provides robustness against voltage spikes.
  • TO-220F Package: Isolated mounting hole for improved thermal dissipation.

Benefits

  • High Efficiency: Reduced power losses through low RDS(on).
  • Simple Gate Drive: Easily driven with common gate drive circuits.
  • Reliable: Rugged design and avalanche capability.
  • Improved Thermal Performance: Isolated TO-220F package facilitates heat sinking.
  • Cost-Effective: Provides a good balance of performance and cost.

Additional Details

Important parameters of the NCE70T260EF include the gate threshold voltage (VGS(th)), continuous drain current (ID), and total gate charge (Qg). Consult the Wuxi NCE Power Semiconductor datasheet for the precise values and safe operating area (SOA) characteristics. The datasheet also specifies the operating and storage temperature ranges, as well as the thermal resistance junction to case. Proper gate drive design and heat sinking are essential for optimal performance and reliability. The 'EF' at the end may denote particular characteristics regarding package or enhanced features – check the datasheet for specifics.

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