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W29N02GVBIAF

Part No W29N02GVBIAF
Manufacturer Winbond Electronics
Catalog Flash
Description IC FLASH 2GBIT PARALLEL 63VFBGA / FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parallel 25 ns 63-VFBGA (9x11)
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Category Integrated Circuits (ICs)>Memory
Mfr Winbond Electronics
Package Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gb (256M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Base Product Number W29N02
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 96
Win Source Part Number 1104399-W29N02GVBIAF
Ultra Librarian 3D Model Ultra Librarian W29N02GVBIAF CAD Model

Description

The Winbond W29N02GVBIAF is a 2G-bit Serial NAND Flash memory, operating at 3.3V. It provides a high-density, non-volatile storage solution. This type of memory is commonly used in applications where large amounts of data need to be stored and retrieved reliably, such as in embedded systems and mobile devices.

Applications:

  • Embedded Systems: Utilized for storing boot code, operating systems, and application code in microcontrollers and other embedded systems.
  • Mobile Devices: Found in smartphones, tablets, and other mobile devices for storing operating systems, applications, and user data.
  • Solid State Drives (SSDs): Used as a component in SSDs for data storage.
  • Data Loggers: Employed in data logging devices for storing sensor data and other recorded information.
  • Networking Devices: Integrated into routers, switches, and other networking equipment for storing firmware and configuration data.

Features:

  • 2G-bit Serial NAND Flash Memory: Offers a large storage capacity for various applications.
  • 3.3V Operation: Operates at a 3.3V power supply for efficient power usage.
  • Serial Interface: Uses a serial interface for simplified connection and control.
  • Page Program: Supports page program operations for efficient data writing.
  • Block Erase: Provides block erase capability for erasing large sections of memory.
  • Wear Leveling: Includes wear leveling algorithms to extend the lifespan of the memory.
  • ECC (Error Correction Code): Incorporates ECC to ensure data integrity.

Benefits:

  • High-Density Storage: Provides a large storage capacity in a small form factor.
  • Low Power Consumption: Designed for low power consumption, making it suitable for battery-powered devices.
  • Reliable Data Storage: Ensures reliable storage of critical data with ECC and wear leveling.
  • Ease of Integration: Serial interface simplifies integration into various systems.
  • Long Lifespan: Wear leveling algorithms extend the lifespan of the memory.

Additional Details:

The W29N02GVBIAF typically operates within a temperature range of -40°C to +85°C. It is available in different package options. This memory is designed for high endurance and includes various data protection mechanisms to ensure data integrity over its lifespan. The serial interface enables easy interfacing with microcontrollers and other host devices. Detailed timing and control information can be found in the device's datasheet.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.6568 $87.3136
3+ $35.8209 $107.4627
5+ $34.7015 $173.5075
6+ $33.5821 $201.4926
8+ $32.4627 $259.7016
11+ $29.1045 $320.1495
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Availability: 3,720 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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