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WNSC2D201200WQ

Part No WNSC2D201200WQ
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description SILICON CARBIDE SCHOTTKY DIODE  /  Diode Silicon Carbide Schottky 1200 V 20A Through Hole TO-247-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Capacitance @ Vr, F 845pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction 175°C
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1740-WNSC2D201200WQ
Standard Package 600
Win Source Part Number 1050760-WNSC2D201200WQ
Ultra Librarian 3D Model Ultra Librarian WNSC2D201200WQ CAD Model

Description

The WNSC2D201200WQ is a Silicon Carbide Schottky diode that offers a maximum voltage of 1200 V and a maximum current of 20 A.

  • Voltage (Max): 1200 V
  • Current (Max): 20 A
  • Package: TO-247-2
  • Reverse Recovery Time: 0 ns
  • Application: Discrete Semiconductor Products>Diodes - Rectifiers - Single
  • Supplier: WeEn Semiconductors

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43+ $4.1235 $177.3105
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75+ $3.8575 $289.3125
101+ $3.4585 $349.3085
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Availability: 220 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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