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NXPSC10650X6Q

Part No NXPSC10650X6Q
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 10A TO220F / Diode Silicon Carbide Schottky 650 V 10A Through Hole TO-220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Bulk
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 250 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
ECCN EAR99
HTSUS 8541.10.0080
Other Names 934072089127
Standard Package 1,000
Win Source Part Number 1114065-NXPSC10650X6Q
Ultra Librarian 3D Model Ultra Librarian NXPSC10650X6Q CAD Model

Description

The NXPSC10650X6Q is a silicon carbide Schottky diode with a maximum reverse voltage of 650V and an average rectified current of 10A.

  • Maximum Reverse Voltage: 650V
  • Average Rectified Current: 10A
  • Forward Voltage: 1.7V @ 10A
  • Reverse Recovery Time: 0ns
  • Capacitance: 300pF @ 1V and 1MHz
  • Operating Temperature (Max): 175°C
  • Mounting Type: Through-hole
  • Package/Case: TO-220-2 full pack, isolated tab
  • Supplier Device Package: TO-220F
  • HTSUS: 8541.10.0080
  • Manufacturer: WeEn Semiconductors

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.5904 $50.2656
30+ $3.3587 $100.7610
47+ $3.2429 $152.4163
67+ $3.0113 $201.7571
87+ $2.8955 $251.9085
108+ $2.7796 $300.1968
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Availability: 5,187 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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